Method of manufacturing patterned substrate

ABSTRACT

Provided is a method of manufacturing a patterned substrate. The method may be applied to a process of manufacturing a device such as an electronic device or integrated circuit, or another use, for example, to manufacture an integrated optical system, a guidance and detection pattern of a magnetic domain memory, a flat panel display, a LCD, a thin film magnetic head or an organic light emitting diode, and used to construct a pattern on a surface to be used to manufacture a discrete tract medium such as an integrated circuit, a bit-patterned medium and/or a magnetic storage device such as a hard drive.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a national phase entry under 35 U.S.C. § 371of International Application No. PCT/KR2015/010338, filed Sep. 30, 2015,published in Korean, which claims priority to and the benefit of KoreanPatent Application No. 2014-0131964, filed on Sep. 30, 2014, No.2015-0079468, filed on Jun. 4, 2015, No. 2014-0175411, filed on Dec. 8,2014, No. 2014-0175414, filed on Dec. 8, 2014, No. 2014-0175410, filedon Dec. 8, 2014, No. 2014-0175415, filed on Dec. 8, 2014, No.2014-0175412, filed on Dec. 8, 2014, No. 2014-0175413, filed on Dec. 8,2014, No. 2014-0175407, filed on Dec. 8, 2014, No. 2014-0175406, filedon Dec. 8, 2014, No. 2014-0175400, filed on Dec. 8, 2014, No.2014-0175401, filed on Dec. 8, 2014, and No. 2014-0175402, filed on Dec.8, 2014, the disclosures of which are incorporated herein by referencein their entirety.

FIELD

The present application relates to a method of manufacturing a patternedsubstrate.

BACKGROUND

A block copolymer has a molecular structure in which polymer blockshaving different chemical structures are linked by covalent bonds. Theblock copolymer may form a periodically arranged structure such as asphere, a cylinder or a lamella through phase separation. The shape andsize of a domain of the structure formed by self assembly of the blockcopolymer may be controlled in a wide range by, for example, the type ofa monomer forming each block or the relative ratio of blocks.

Due to such a characteristic, the block copolymer is considered to beapplied to lithographic process that can manufacture nanowires,manufacture various next generation nano elements such as quantum dotsor metal dots, or form a high density pattern on a predeterminedsubstrate (e.g., refer to Non-patent document 1).

The technology of controlling orientation of the structure in which theblock copolymers are self-assembled on various types of substrateshorizontally or vertically is a very big part of practical applicationof the block copolymer. Conventionally, the orientation of a nanostructure on a film of the block copolymer is determined by which blockis exposed to a surface or in the air. Generally, since a plurality ofsubstrates are polar and the air is non-polar, among blocks of the blockcopolymer, a block having a higher polarity is wetted on a substrate,and a block having a lower polarity is wetted at an interface betweenthe block and the air. Accordingly, to simultaneously wet blocks of theblock copolymer, which have different characteristics, on a substrate,various techniques are suggested, and the most typical technique iscontrol of orientation through manufacture of a neutral surface.

Non-Patent Document

-   (Non-patent document 1) Chaikin and Register. et al., Science 276,    1401 (1997)

DESCRIPTION Object

The present application is directed to providing a method ofmanufacturing a patterned substrate.

Solution

The term “alkyl group” used herein may refer to, unless particularlydefined otherwise, an alkyl group having 1 to 20, 1 to 16, 1 to 12, 1 to8, or 1 to 4 carbon atoms. The alkyl group may be a linear, branched orcyclic alkyl group, and may be optionally substituted with one or moreone substituent.

The term “alkoxy group” used herein may refer to, unless particularlydefined otherwise, an alkoxy group having 1 to 20, 1 to 16, 1 to 12, 1to 8, or 1 to 4 carbon atoms. The alkoxy group may be a linear, branchedor cyclic alkoxy group, and may be optionally substituted with one ormore substituent.

The term “alkenyl group” or “alkynyl group” used herein may refer to,unless particularly defined otherwise, an alkenyl group or alkynyl grouphaving 2 to 20, 2 to 16, 2 to 12, 2 to 8, or 2 to 4 carbon atoms. Thealkenyl group or alkynyl group may be a linear, branched or cyclicalkenyl or alkynyl group, and may be optionally substituted with one ormore substituent.

The term “alkylene group” used herein may be, unless particularlydefined otherwise, an alkylene group having 1 to 20, 1 to 16, 1 to 12, 1to 8, or 1 to 4 carbon atoms. The alkylene group may be a linear,branched or cyclic alkylene group, and may be optionally substitutedwith one or more substituent.

The term “alkenylene group or alkynylene group” used herein may referto, unless particularly defined otherwise, an alkenylene or alkynylenegroup having 2 to 20, 2 to 16, 2 to 12, 2 to 8, or 2 to 4 carbon atoms.The alkenylene group or alkynylene group may be a linear, branched orcyclic alkenylene or alkynylene group, and may be optionally substitutedwith one or more substituent.

The term “single bond” used herein may refer to the case in which aseparate atom is not present in the corresponding part. For example,when B is a single bond in the structure represented as A-B-C, aseparate atom is not present in the part represented by B, and A and Care directly linked, thereby forming the structure represented by A-C.

In the present application, as a substituent that can be optionallysubstituted in an alkyl group, an alkenyl group, an alkynyl group, analkylene group, an alkenylene group, an alkynylene group, an alkoxygroup, an aryl group, an arylene group, or a chain or aromaticstructure, a hydroxyl group, a halogen atom, a carboxyl group, aglycidyl group, an acryloyl group, a metacryloyl group, an acryloyloxygroup, a metacryloyloxy group, a thiol group, an alkyl group, an alkenylgroup, an alkynyl group, an alkylene group, an alkenylene group, analkynylene group, an alkoxy group or an aryl group may be used, but thepresent application is not limited thereto.

The present application relates to a method of manufacturing a patternedsubstrate. In one embodiment, the manufacturing method may be performedby lithographic process using a directed self-assembly material as atemplate. Here, the directed self-assembly material may be, for example,a block copolymer.

The method may be applied to, for example, a process of manufacturingdevices such as an electronic device and an integrated circuit or adifferent use such as manufacture of an integrated optical system, aguidance and a test pattern of a magnetic domain memory, a flat display,a liquid crystal display (LCD), a thin film magnetic head or an organiclight emitting diode. The method may also be used to construct a patternon a surface used to manufacture an integrated circuit, a bit-patternedmedium and/or a discrete track medium such as a hard drive.

The method may include forming a layer of a directed self-assemblymaterial on a substrate on which a template is formed, and inducing theself-assembly. In the above, the template may include mesa structuresthat are arranged on the substrate and are spaced from each other. Atrench may be formed on the substrate by the mesa structures and theself-assembly material such as a block copolymer may be formed withinthe trench.

A type of the substrate applied to the method of the present applicationis not particularly limited. As an illustrative substrate to which themethod of the present application is applied, various substrate such asa substrate required to have a pattern on its surface in order to beused in the above-described application may be used. This kind ofsubstrate, for example, may be a semiconductor substrate such as asilicon substrate, a silicon germanium substrate, GaAs substrate,silicon oxide substrate. The substrate, for example, in a substrate thatis applied to the formation of other electronic devices such as finfield effect transistor (finFETs) or a diode, transistors or capacitorsmay be used. In addition, other materials also may be used as thesubstrate of ceramic or the like according to the application, type ofsubstrate that can be applied in the present application is notparticularly limited.

On the surface of the substrate used in the present method, mesastructures may be formed and arranged with an interval between them. Forexample, each of the mesa structures may have a line shape. Such mesastructures may be disposed apart from each other at regular intervals onthe surface of the substrate. The mesa structures may be disposedsubstantially parallel to each other on the surface of the substrate.Two or more mesa structures may be formed on the surface of thesubstrate. That is, the number of trenches formed by the mesa structureson the surface of the substrate may be one or more. The numbers of themesa structures and trenches may be controlled depending on their useswithout particular limitation. The mesa structures may serve to guidethe self-assembly structure of the block copolymer formed when a filmincluding the directed self-assembly material such as the blockcopolymer is formed in the trench formed by the mesa structures.

FIG. 1 shows an illustrative substrate 1 in which a trench is formed.The illustrative substrate 1 shown in FIG. 1 may include a side wall 3having a mesa structure, and a trench 2 formed by the substrate or asurface 4 having the mesa structure.

For example, as shown in FIG. 2, a film 5 including a directedself-assembly material such as a block copolymer may be formed in thetrench 2, and thus form a lamellar-shape self-assembly structure inwhich two domains A and B, which are chemically different from eachother, are alternately formed in a line shape.

The shape of the trench on the surface of the substrate may bedetermined by a pattern to be formed on the substrate or a self-assemblystructure of the block copolymer, which is required depending on thepattern.

In one embodiment, the ratio (D/H) of a distance (D) of the mesastructures disposed apart to form the trench to a height (H) of the mesastructure may be in a range of 0.1 to 10, 0.5 to 10, 1 to 10, 1 to 9, 1to 8, 1 to 7, 1 to 6, 1 to 5 or 1 to 4. Also, the ratio (D/W) of thedistance (D) between the mesa structures and a width (W) of the mesastructure may be in a range of 0.5 to 10, 1 to 10, 1 to 9, 1 to 8, 1 to7, 1 to 6, 1 to 5 or 1 to 4. The ratio (D/H or D/W) may be changeddepending on a desired use. The term “distance (D) of the mesastructure” used herein refers to the shortest distance between adjacentmesa structures that are spaced apart, and the distance (D) may be, forexample, about 10 to 500 nm, 10 to 450 nm, 10 to 400 nm, 10 to 350 nm,10 to 300 nm, 50 to 300 nm, or 100 to 300 nm. The term “height (H) ofthe mesa structure” used herein is a dimension of the mesa structuremeasured upward from a surface of the substrate along a normal linedirection of the substrate surface, and may be, for example, about 1 to100 nm, 1 to 90 nm, 5 to 90 nm, 10 to 90 nm, 10 to 80 nm, or 20 to 70nm. The term “width (W) of the mesa structure” used herein is adimension of the mesa structure from the substrate surface along avertical direction to the normal line direction of the substratesurface, and may be, for example, about 10 to 500 nm, 10 to 450 nm, 10to 400 nm, 10 to 350 nm, 10 to 300 nm, 50 to 300 nm, or 100 to 300 nm.

For example, when the directed self-assembly material is a blockcopolymer, and a lamellar pattern of the block copolymer, the distancebetween the mesa structures may be about 1 to 20 L. In this case, athickness of a film including the block copolymer, that is, a filmformed in the trench may be about 1 to 10 L or 1 to 8 L. Here, L mayrefer to a pitch of the lamellar pattern formed by the block copolymer.

When the mesa structure is controlled in the above-described shape,self-assembly of the block copolymer may be effectively guided in thetrench formed by the mesa structures. However, the dimension of the mesastructure is merely an example of the present application, and may bechanged depending on a specific aspect.

A method of forming the above-described mesa structure on the substrateis not particularly limited, and thus a known method can be applied. Forexample, the mesa structure may be formed by etching the substrate by asuitable method, or depositing a suitable material on the substrate.

For example, the trench formed by the mesa structure may includesequentially forming a mesa structure-forming material layer, anantireflection layer, and a resist layer on the substrate; patterningthe resist layer; and etching mesa structure-forming material layerusing the patterned resist layer as a mask.

Here, the type of the mesa structure forming material is notparticularly limited. For example, as will be described below, thematerial layer form a mesa structure through an etching process usingthe patterned resist layer as a mask, and in this process, a suitablyetchable material may be used. For example, the material may be SiO₂, anamorphous carbon layer (ACL), a spin-on-glass (SOG), spin-on-carbon(SOC) or silicon nitride. Such a material layer may be coated by, forexample, spin coating or deposition method such as chemical vapordeposition (CVD). A thickness of the material layer when the layer isformed is not particularly limited, and the layer may be formed to asuitable thickness by considering the height (H) of a desired mesastructure.

The antireflection layer may be formed on the mesa structure-formingmaterial layer. The antireflection layer may be formed in siARC using asilicon (Si) material, and other than this, any known material may beused. The antireflection layer may be formed by a known coating ordeposition method.

The resist layer may be formed on the antireflection layer. The resistlayer may be formed using a known material, for example, a knownmaterial which can be patterned by a lithographic process. Such a resistlayer may be patterned by a known lithographic process, and thepatterned resist layer obtained thereby may be used as a mask in thefollowing mesa forming process. The patterning of the resist layer maybe performed to control the dimensions of the mesa structure at adesired level in the following etching process.

After the patterning of the resist layer, the etching process using thepatterned resist layer as an etch mask, and in the etching process, theantireflection layer and the mesa-forming material layer in a regionexcluding a region protected by the etch mask may be etched. Suchetching may be performed by a known etching process, and may beperformed by, for example, a reactive ion etching (RIE) method. Theabove-described mesa structure is formed by the etching process, therebyforming a trench. The etching process may be performed until themesa-forming material in the region not protected by the etch mask willbe completely removed, or performed for some of the material to remain.Therefore, the trench may be formed by a side wall of the mesa structureand a surface of the substrate between the side walls, and may be formedon the side wall of the mesa structure and a surface of the mesastructure-forming material between the side walls.

According to the above description, one mesa-forming material layer andone antireflection layer are formed on the surface of the substrate, andthe lithographic process is performed thereon. However, when necessary,two or more each of the mesa-forming material layers and antireflectionlayers may be alternately formed.

The self-assembly structure formed in the trench as described above mayinclude vertically-oriented block copolymers. The term “verticaloriented” used herein may refer to an orientation property of a blockcopolymer and may refer to a case where an orientation direction of aself assembled structure formed by the block copolymer is vertical to adirection of a substrate. For example, the vertical oriented structuremay refer to a case where block domains of the self assembled blockcopolymer lay side by side on the surface of the substrate and aninterfacial region between the block domains is formed to besubstantially vertical to the surface of the substrate. The term“vertical” used herein is an expression allowing for an error, forexample, an error within ±10, ±8, ±6, ±4 or ±2 degrees.

The self-assembly structure of the block copolymer formed in the trenchmay be, for example, a spherical, cylindrical, gyroid or lamellar shape,and in one embodiment, a lamellar structure. However, the presentapplication is not limited thereto. For example, when a block copolymerincluding first and second blocks is used as the block copolymer, in asegment of the first or second block or a third block covalently bondedthereto, another segment may have a regular structure such as a lamellaror cylindrical shape.

The surface within the trench, on which the layer of the block copolymeris formed, may be a surface to which conventional treatment that hasbeen performed in order to realize the vertical orientation, such as aso called neutral surface treatment or a chemical pre-patterning, is notperformed. Therefore, the surface within the trench, with which thelayer comprising the block copolymer contacts, may be a surface to whichany neutral treatment is not performed. The term “neutral treatment” maybe translated as including any conventional treatment performed in orderto realize the vertical orientation such as the neutral brush layer orthe chemical pre-patterning. Further, the term “one layer contactingwith another layer” as used herein may refer to a case there is no otherlayer between the two layers.

Further, in the above, a side wall of the mesa structure, with which thedirected self assembly material such as the block copolymer contacts,may also be a surface to which any additional treatment is notperformed. In conventional processes, in order to realize an appropriateself assembled structure, a treatment such as a hydrophobic orhydrophilic treatment is usually performed also on the side wall of themesa structures, however, in the present method, such a treatment maynot be performed.

In order to realize a vertically oriented or aligned self assembledstructure in the layer contacting the surface within the trench and theside wall of the mesa structures, to which conventional treatment suchas the neutral treatment that has been performed for realizing thevertical orientation is not performed, some factors may be controlled.

For example, as a block copolymer that is deposited within the trench, ablock copolymer as described below may be used. The block copolymer asdescribed below is capable of forming a vertical oriented or alignedstructure even on the surface of the trench to which the neutraltreatment is not performed.

The illustrative block copolymer used in the above method may include afirst block and a second block different from the first block. Eachblock of the block copolymer may be formed only using one type ofmonomer, or two or more types of monomers. The block copolymer may be adiblock copolymer only including one first block and one second block.Alternatively, the block copolymer may be a triblock copolymer includingeach one of the first block and the second block, and additionally anyone or all of the first and second blocks, or additionally a thirdblock, other than the first and second blocks.

Since the block copolymer includes two or more polymer chains linked bycovalent bonds, phase separation occurs, and thereby a self-assemblystructure is formed. The inventors confirmed that, when a blockcopolymer satisfies any one or two or more conditions that will bedescribed below, a vertically-oriented self-assembly structure can alsobe formed on a surface of the trench substrate on which theabove-described neutral treatment is not performed. Therefore, anotheraspect of the present application provides a block copolymer satisfyingat least one of the conditions that will be described below. The shapeor size of the nano-scale structure may be controlled by controlling thesize, for example, a molecular weight, of a block copolymer, or relativeratios between blocks. The following conditions are parallel, and thusone condition is not prior to another condition. The block copolymer maysatisfy any one, or two or more selected from the following conditions.It was shown that the block copolymer can have vertical orientationthrough satisfaction of any one of the following conditions. The term“vertical orientation” used herein refers to the orientation of theblock copolymer, and may refer to orientation of the nano structureformed by the block copolymer, which is vertical to a substratedirection. For example, the vertical orientation may mean that aninterface between a domain formed by the first block and a domain formedby the second block of the block copolymer is vertical to a surface ofthe substrate. The term “vertical” used herein is an expression allowingfor an error, which includes, for example, an error within ±10, ±8, ±6,±4 or ±2 degrees.

Conventionally, the orientation of the nano structure is determined bywhich one of the blocks forming the block copolymer is exposed to thesurface or in the air. Generally, since many substrates are polar, andthe air is non-polar, among blocks of the block copolymer, a blockhaving a higher polarity is in contact with the substrate, and a blockhaving a smaller polarity is in contact with the air. Therefore, varioustechniques are suggested to be simultaneously in contact with blocks ofthe block copolymer, which have different characteristics, the mostrepresentative technique is the application of a neutral surface.

The inventor has confirmed that it becomes possible to realize thevertical orientation or vertical alignment even on the substrate towhich any conventional treatment known for realizing the verticalorientation or alignment including the neutral brush layer is notperformed by making the block copolymer to satisfy one, or two or moreor all of the conditions as described below.

For example, a block copolymer according to one aspect of the presentapplication may formed the vertical orientation with respect to both ofhydrophilic and hydrophobic surfaces on which special pretreatment isnot performed.

Also, in another aspect of the present application, the verticalorientation described above may be induced within a short time in alarge area through thermal annealing.

One illustrative block copolymer in the present application includes afirst block and a second block having a different chemical structurefrom the first block, and the block copolymer or the first block mayshow a peak at an azimuth angle within −90 to −70 degrees, and a peak atan azimuth angle within 70 to 90 degrees of a diffraction pattern of ascattering vector in a range of 12 nm⁻¹ to 16 nm⁻¹ of the grazingincident wide angle X ray scattering (GIWAXS) spectrum (Condition 1).

Another illustrative block copolymer used in the present applicationincludes a first block and a second block having different chemicalstructure from the first block, and the block copolymer or the firstblock may show a melting transition peak or isotropic transition peak ina range of −80 to 200° C. through differential scanning calorimetry(DSC) analysis (Condition 2).

Another illustrative block copolymer used in the present applicationincludes a first block and a second block having a different chemicalstructure from the first block, and the block copolymer or the firstblock may show a peak having a full width at half maximum (FWHM) in arange of 0.2 to 0.9 nm⁻¹ within the range of a scattering vector (q) of0.5 to 10 nm⁻¹ through XRD analysis (Condition 3).

Another illustrative block copolymer used in the present applicationincludes a first block and a second block having a different chemicalstructure from the first block. The first block includes a side chain,and the number (n) of chain-forming atoms of the side chain and thescattering vector (q) estimated by XRD analysis performed on the firstblock may satisfy the following Equation 2 (Condition 4).3 nm⁻¹ to 5 nm⁻¹ =nq/(2×π)  [Equation 2]

In Equation 2, n is the number of chain-forming atoms of the side chain,q is the smallest scattering vector (q) showing a peak in X-raydiffraction analysis performed on a block including the side chain, or ascattering vector (q) showing the peak having the largest peak area.

Another illustrative block copolymer used in the present applicationincludes a first block and a second block having a different chemicalstructure from the first block, and the absolute value of the differencein surface energy between the first block and the second block may be 10mN/m or less (Condition 5).

Another illustrative bock copolymer used in the present applicationincludes a first block and a second block having a different chemicalstructure from the first block, and the absolute value of the differencein density between the first and second blocks may be 0.25 g/cm³ or more(Condition 6).

Another illustrative block copolymer used in the present applicationincludes a first block and a second block having a different chemicalstructure from the first block, and a volume fraction of the first blockmay be in a range of 0.2 to 0.6, and a volume fraction of the secondblock may be in a range of 0.4 to 0.8 (Condition 8). Such a blockcopolymer may form a so called lamellar structure.

In the present application, a physical property that can be changed by atemperature such as a wetting angle or density is, unless particularlydefined otherwise, a value measured at a room temperature. The term“room temperature” is a natural temperature, which is not increased ordecreased, for example, about 10 to 30° C., specifically, about 25 or23° C.

In the block copolymer, the first block may be a block including a sidechain, which will be described below.

Hereinafter, the following conditions will be described in detail.

A. Condition 1

Any one block of a block copolymer of the present application may showpeaks at both of an azimuthal angle in a range of −90 to −70 degrees andan azimuthal angle in a range of 70 to 90 degrees of a diffractionpattern of a scattering vector in a range of 12 nm⁻¹ to 16 nm⁻¹ of aGIWAXS spectrum. The blocks showing the peaks may be blocks includingside chains, which will be described below. In the specification, theblock including the side chain may be a first block. Here, the azimuthalangle is an azimuthal angle when an angle of the diffraction pattern inan upper direction (direction of out-of-plane diffraction) is 0 degrees,which is measured in a clock-wise direction. In other words, the anglemeasured in the clock-wise direction is represented by a positivenumber, and the angle measured in a counter clock-wise direction isrepresented by a negative number. An FWHM observed at each azimuthalangle may be in a range of 5 to 70 degrees. The FWHM may be, in anotherembodiment, 7, 9, 11, 13, 15, 17, 19, 21, 25, 30, 35, 40, 45 degrees ormore. The FWHM may be, in another embodiment, 65 or 60 degrees or less.A method of obtaining the GIWAXS spectrum is not particularly limited,and may be obtained by the following method of describing examples. Aprofile of a diffraction pattern peak of the obtained spectrum may befitted through Gauss fitting, and therefrom, the FWHM may be obtained.In this case, when a half of the Gauss fitting result is obtained, theFWHM may be defined twice a value obtained from the result in which thehalf of the Gauss fitting result. In the Gauss fitting, a R square is ina range of about 0.26 to 0.95. That is, the above-described FWHM isobserved at any one R square in the above range. A method of obtainingthe above-described information is known in the art, and for example, anumerical analysis program such as Origin may be applied.

GIWAXS may be detected on a polymer prepared only using a monomerconstituting a block to be detected. For example, the GIWAXS may bedetected by forming a film using the polymer and performing thermalannealing on the film. The film may be formed by applying a coatingsolution prepared by diluting the polymer with a solvent (for example,fluorobenzene) at a concentration of about 0.7 wt % to have a thicknessof about 25 nm and a coating area of 2.25 cm² (width: 1.5 cm, length:1.5 cm), and thermally annealing such a coating film. The thermalannealing may be performed by maintaining the film, for example, atabout 160° C. for about 1 hour. The block showing the above-describedpeak at the above-described azimuthal angle of the GIWAXS may bearranged to have orientation, and such a block may show an excellentphase separation or self-assembly characteristic, and verticalorientation with a different block.

B. Condition 2

The block copolymer of the present application or any one block of theblock copolymer may show a melting transition peak or isotropictransition peak in a range of −80 to 200° C. through DSC analysis. Whenany one block of the block copolymer shows the above-described behaviorin the DSC analysis, and the block copolymer including such a blocksimultaneously satisfies Conditions 2 and 3, the block showing the abovebehavior through the DSC analysis may be a block showing the peak in theGIWAXS described in Condition 2, that is, a peak showing at all of anazimuthal angle in a range of −90 to −70 degrees and an azimuthal anglein a range of 70 to 90 degrees of the diffraction pattern of ascattering vector in a range of 12 to 16 nm⁻¹ of the GIWAXS spectrum,for example, a first block. The block copolymer or any one block of theblock copolymer may show any one or both of the melting transition peakand isotropic transition peak. Such a block copolymer may be a copolymeroverall showing a crystal phase and/or liquid crystal phase, whichare/is suitable for self-assembly, or showing such a crystal phaseand/or liquid crystal phase.

The block copolymer showing the DSC behavior described above or any oneblock of the block copolymer may additionally satisfy the followingcondition in Condition 2.

For example, when the isotropic transition peak and the meltingtransition peak are simultaneously shown, the difference (Ti−Tm) betweena temperature (Ti) at which the isotropic transition peak is shown and atemperature (Tm) at which the melting transition peak is shown may be ina range of 5 to 70° C. In another embodiment, the difference (Ti−Tm) maybe 10° C. or more, 15° C. or more, 20° C. or more, 25° C. or more, 30°C. or more, 35° C. or more, 40° C. or more, 45° C. or more, 50° C. ormore, 55° C. or more or 60° C. or more. The block copolymer or blockcopolymer including such a block having a difference (Ti−Tm) between thetemperature (Ti) of the isotropic transition peak and the temperature(Tm) of the melting transition peak in the above range may have anexcellent phase separation or self-assembly characteristic.

In another embodiment, when the isotropic transition peak and themelting transition peak are simultaneously shown, a ratio (M/I) of anarea (I) of the isotropic transition peak and an area (M) of the meltingtransition peak may be in a range of 0.1 to 500. A block copolymerhaving the ratio (M/I) of the area (I) of the isotropic transition peakand the area (M) of the melting transition peak according to the DSCanalysis or a block copolymer including such a block may maintainexcellent phase separation or self-assembly characteristic. In anotherembodiment, the ratio (M/I) may be 0.5, 1, 1.5, 2, 2.5, 3 or more. Also,in another embodiment, the ratio (M/I) may be 450, 400, 350, 300, 250,200, 150, 100, 90, 85 or less.

A method of performing the DSC analysis is known in the art, and in thepresent application, the analysis may be performed by such a knownmethod.

A range of at temperature (Tm) at which the melting transition peak isshown may be in a range of −10° C. to 55° C. In another embodiment, thetemperature (Tm) may be 50° C. or less, 45° C. or less, 40° C. or less,35° C. or less, 30° C. or less, 25° C. or less, 20° C. or less, 15° C.or less, 10° C. or less, 5° C. or less, 0° C. or less.

The block copolymer may include a block having a side chain as will bedescribed below. In this case, the block copolymer may satisfy thefollowing Equation 1.10° C.≤Tm−12.25° C.×n+149.5° C.≤10° C.  [Equation 1]

In Equation 1, Tm may be the temperature at which the melting transitionpeak of the block copolymer or block having a side chain, and n is thenumber of chain-forming atoms of the side chain.

The block copolymer satisfying the above equation may have an excellentphase separation or self-assembly characteristic.

In Equation 1, Tm−12.25° C.×n+149.5° C. may be, in another embodiment,about −8 to 8° C., about −6 to 6° C. or about −5 to 5° C.

C. Condition 3

The block copolymer of the present application may include a blockshowing at least one peak within a predetermined range of scatteringvectors (q) in X-ray Diffraction analysis (XRD analysis). When the blockcopolymer satisfies Condition 3 as well as Conditions 1 and/or 2, theblock satisfying Conditions 1 and/or 2 may be a block satisfyingCondition 3. The block satisfying Condition 3 may be the first block.

For example, any one block of the block copolymer may show at least onepeak within the scattering vector (q) of 0.5 to 10 nm⁻¹ in the XRDanalysis. The scattering vector (q) shown by the peak may be, in anotherembodiment, 0.7, 0.9, 1.1, 1.3, 1.5 nm⁻¹ or more. The scattering vector(q) shown by the peak may be, in another embodiment, 9, 8, 7, 6, 5, 4,3.5, 3 nm⁻¹ or less. An FWHM detected in the range of the scatteringvector (q) may be in a range of 0.2 to 0.9 nm⁻¹. The FWHM may be, inanother embodiment, 0.25, 0.3, 0.4 nm⁻¹ or more. The FWHM may be, inanother embodiment, 0.85, 0.8, 0.75 nm⁻¹ or less.

In Condition 4, the term “full width at half maximum (FWHM)” may referto a width (difference in scattering vector (q)) of a peak at a positionshowing ½ of the maximum peak intensity.

The scattering vector (q) and the FWHM in the XRD analysis is a valueobtained by applying a numerical analysis method using a least squaremethod on a result obtained by the following XRD analysis. In the abovemethod, a part showing the least intensity in an XRD diffraction patternmay be set as a baseline to make the intensity 0, a profile of the XRDpattern peak is fitted by Gaussian fitting, and the scattering vectorand the FWHM may be obtained from the fitted result. In the Gaussfitting, the R square is at least 0.9, 0.92, 0.94 or 0.96 or more. Amethod of obtaining such information from the XRD analysis is known inthe art, and for example, a numerical analysis program such as Originmay be applied.

The block showing the FWHM in the range of the scattering vector (q) mayinclude a crystal part suitable for self-assembly. The block copolymerincluding a block identified in the above-described range of thescattering vector (q) may have an excellent self-assemblycharacteristic.

The XRD analysis may be performed by measuring a scattering intensityaccording to a scattering vector after a sample was irradiated with xrays. The XRD analysis may be performed using a polymer prepared bypolymerizing any one block of the block copolymer, for example, only amonomer constituting the first block. The XRD analysis may be performedon such a polymer without particular pretreatment, and for example, byirradiating the polymer with X rays after being dried under suitableconditions. As an X ray, an X ray having a vertical size of 0.023 mm anda horizontal size of 0.3 mm may be applied. An image of a 2D diffractionpattern may be obtained by scattering a sample using a measuring device(for example, 2D marCCD), and the obtained diffraction pattern may befitted by the above-described method, thereby obtaining a scatteringvector and an FWHM.

D. Condition 4

The block copolymer of the present application may include a blockhaving a side chain, which will be described blow, as a first block, andthe number (n) of chain-forming atoms of the side chain may satisfy thescattering vector (q) obtained by XRD analysis performed as shown inCondition 3 and the following Equation 2.3 nm⁻¹ to 5 nm⁻¹ =nq/(2×π)  [Equation 2]

In Equation 2, n is the number of chain-forming atoms, and q is theleast scattering vector (q) showing a peak in the XRD analysis performedon the block including a side chain, or a scattering vector (q) showinga peak having the largest peak area. Also, in Equation 2, π is thecircular constant.

The scattering vector introduced to Equation 2 is a value obtained bythe same method described in the XRD analysis method.

The scattering vector (q) introduced to Equation 2 may be, for example,in a range of 0.5 to 10 nm⁻¹. The scattering vector (q) introduced toEquation 2 may be, in another embodiment, 0.7 nm⁻¹ or more, 0.9 nm⁻¹ ormore, 1.1 nm⁻¹ or more, 1.3 nm⁻¹ or more, 1.5 nm⁻¹ or more. Thescattering vector (q) introduced to Equation 2 may be, in anotherembodiment, 9 nm⁻¹ or less, 8 nm⁻¹ or less, 7 nm⁻¹ or less, 6 nm⁻¹ orless, 5 nm⁻¹ or less, 4 nm⁻¹ or less, 3.5 nm⁻¹ or less, 3 nm⁻¹ or less.

Equation 2 shows the relation between the distance (D) between polymermain chain including the side chain and the number of chain-formingatoms when a film is formed of a polymer constituting only a blockhaving the side chain of the block copolymer, and when the number ofchain-forming atoms of the side chain of the polymer having the sidechain satisfies Equation 2, crystallinity of the side chain isincreased, and thus a phase separation characteristic or verticalorientation of the block copolymer may be highly enhanced. The nq/(2×π)according to Equation 2 may be, in another embodiment, 4.5 nm⁻¹ or less.Here, the distance between main chains of the polymer having the sidechain (D, unit: nm) may be calculated by Equation D=2×π/q, in which D isthe distance (D, unit: nm), and π and q are defined in Equation 2.

E. Condition 5

The absolute value of the difference in surface energy between the firstblock and the second block of the block copolymer of the presentapplication may be 10, 9, 8, 7.5, 7 mN/m or less. The absolute value ofthe difference in surface energy may be 1.5, 2, 2.5 mN/m or more. Astructure in which the first block and the second block having the aboverange of the absolute value of the difference in surface energy arelinked by covalent bonds may direct effective microphase separation byphase separation caused by suitable non-compatibility. Here, the firstblock may be, for example, a block having a side chain which will bedescribed above, or a block having an aromatic structure without ahalogen atom.

The surface energy may be measured using a drop-shape analyzer (DSA100,KRUSS). Particularly, the surface energy may be measured on a filmprepared by applying a coating solution prepared by diluting a targetsample (a block copolymer or a homopolymer) for measuring surface energywith fluorobenzene at a concentration of a solid content of about 2 wt %onto a substrate to have a thickness of about 50 nm and a coating areaof 4 cm² (width: 2 cm, length: 2 cm), drying the substrate at roomtemperature for about 1 hour, and thermal-annealing the dried substrateat 160° C. for about 1 hour. A process of measuring a contact angle bydropping deionized water whose surface tension is known onto thethermal-annealed film is repeated five times, thereby obtaining a meanvalue of the obtained five contact angles, and a process of obtaining acontact angle by dropping diiodomethane whose surface tension is knownin the same manner as describe above is repeated five times, therebyobtaining a mean value of the obtained five contact angles. Afterward,surface energy may be obtained by substituting a value for surfacetension (Strom value) of a solvent by the Owens-Wendt-Rabel-Kaelblemethod using a mean value of the obtained contact angles for thedeionized water and diiodomethane, thereby obtaining surface energy. Avalue of the surface energy for each block of the block copolymer may becalculated on a homopolymer prepared only using a monomer forming theblock.

When the block copolymer includes the above-described side chain, theblock having the side chain may have higher surface energy than otherblocks. For example, when the first block of the block copolymerincludes a side chain, the first block may have higher surface energythan the second block. In this case, the surface energy of the firstblock may be in a range of about 20 to 40 mN/m. The surface energy ofthe first block may be 22, 24, 26, 28 mN/m or more. The surface energyof the first block may be 38, 36, 34, 32 mN/m or less. The blockcopolymer including the first block and having the different in surfaceenergy as described above from the second block may have an excellentself-assembly characteristic.

F. Condition 6

The absolute value of a difference in density between the first blockand the second block in the block copolymer may be 0.25 g/cm³ or more,0.3 g/cm³ or more, 0.35 g/cm³ or more, 0.4 g/cm³ or more, or 0.45 g/cm³or more. The absolute value of the difference in density may be 0.9g/cm³ or less, 0.8 g/cm³ or less, 0.7 g/cm³ or less, 0.65 g/cm³ or less,or 0.6 g/cm³ or less. A structure in which the first block and thesecond block having the above range of the absolute value of thedifference in density are linked by covalent bonds may direct effectivemicrophase separation by phase separation caused by suitablenon-compatibility.

The density of each block of the block copolymer may be measured using aknown buoyancy method, and for example, the density may be measured byanalyzing the mass of the block copolymer in a solvent having known massand density in the air, such as ethanol.

When the above-described side chain is included, the block having theside chain may have a lower density than other blocks. For example, whenthe first block of the block copolymer includes the side chain, thefirst block may have a lower density than the second block. In thiscase, the density of the first block may be in a range of about 0.9 to1.5 g/cm³. The density of the first block may be 0.95 g/cm³ or more. Thedensity of the first block may be 1.4 g/cm³ or less, 1.3 g/cm³ or less,1.2 g/cm³ or less, 1.1 g/cm³ or less, or 1.05 g/cm³ or less. The blockcopolymer including the first block and having the difference in densityfrom the second block may have an excellent self-assemblycharacteristic.

G. Condition 7

The block copolymer may include the first block having a volume fractionof 0.4 to 0.8, and the second block having a volume fraction of 0.2 to0.6. When the block copolymer includes the side chain, the block havingthe chain may have a volume fraction of 0.4 to 0.8. For example, whenthe first block includes the chain, the first block may have a volumefraction of 0.4 to 0.8, and the second block may have a volume fractionof 0.2 to 0.6. The sum of the volume fractions of the first block andthe second block may be 1. The block copolymer including the blockshaving the above-described volume fractions may have excellentself-assembly. The volume fraction of each block of the block copolymermay be obtained based on a density and a molecular weight measured bygel permeation chromatography (GPC) of each block. Here, the density maybe calculated by the above-described method.

As described above, the block copolymer may satisfy any one or two ormore selected from Conditions 1 to 7.

For example, the block copolymer may be a block copolymer satisfyingCondition 1, 2, 3, 4, 5, 6 or 7.

In one embodiment, the block copolymer may include a first blocksatisfying one, or two or more of Conditions 1 to 4 among the abovedescribed conditions, and a second block having a difference in surfaceenergy according to Condition 5.

In another embodiment, the block copolymer may include a first blocksatisfying one, or two or more of Conditions 1 to 4 among the abovedescribed conditions, and a second having a difference in surface energyaccording to Condition 5, and therefore a ratio of the first block tothe second block may satisfy Condition 7.

While not limited by a theory, the first block satisfying any one ofConditions 1 to 4 may have crystallinity or liquid crystallinity, andtherefore, may be packed to have regularity in the formation of aself-assembly structure. In this state, when the first block and thesecond block satisfy a difference in surface energy according toCondition 5, domains formed by each of the first and second blocks maybe substantially neutralized, and therefore, the film may be verticallyoriented regardless of the characteristics of a surface on which theself-assembled film is formed. When the ratio of the blocks satisfiesCondition 7, the neutralization effect may be maximized, and thereforethe resin orientation effect may be maximized

As another condition, a number average molecular weight (Mn) of theblock copolymer may be, for example, in a range of 3,000 to 300,000. Theterm “number average molecular weight” is a conversion value withrespect to standard polystyrene measured by gel permeationchromatography (GPC), and the term “molecular weight” used herein means,unless particularly defined otherwise, the number average molecularweight (Mn). The molecular weight (Mn) may be, in another embodiment,for example, 3000 or more, 5000 or more, 7000 or more, 9000 or more,11000 or more, 13000 or more, or 15000 or more. The molecular weight(Mn) may be, in still another embodiment, about 250000 or less, 200000or less, 180000 or less, 160000 or less, 140000 or less, 120000 or less,100000 or less, 90000 or less, 80000 or less, 70000 or less, 60000 orless, 50000 or less, 40000 or less, 30000 or less, or 25000 or less. Theblock copolymer may have a polydispersity (Mw/Mn) in a range of 1.01 to1.60. The polydispersity may be, in another embodiment, about 1.1 ormore, 1.2 or more, 1.3 or more, or 1.4 or more.

In such a range, the block copolymer may have a suitable self-assemblycharacteristic. The number average molecular weight of the blockcopolymer may be controlled by considering a desired self-assemblystructure.

The above-described conditions may be satisfied by, for example, controlof the structure of the block copolymer. For example, at least one orall of the first and second blocks satisfying one or more of theabove-described conditions may at least include an aromatic structure.All of the first block and the second block may include an aromaticstructure, and in this case, the aromatic structure included in thefirst and second blocks may be the same as or different from each other.Also, at least one of the first and second blocks of the block copolymersatisfying one or more of the above-described conditions may include theabove-described side chain, or at least one halogen atom, which will bedescribed below, and the side chain and the halogen atom may besubstituted by the aromatic structure. The block copolymer of thepresent application may include two or more blocks.

As described above, the first and/or second block(s) of the blockcopolymer may include an aromatic structure. Such an aromatic structuremay be included in only one or both of the first and second blocks. Whenboth of the blocks include aromatic structures, the aromatic structuresof the blocks may be the same as or different from each other.

The term “aromatic structure” used herein refers to the structure of anaromatic compound, and the term “aryl group” may refer to a monovalentresidue derived from the aromatic compound, and “arylene group” mayrefer to a bivalent residue derived from the aromatic compound. Here,the aromatic compound is, unless particularly defined otherwise, acompound which has a benzene ring, or two or more benzene rings, whichare linked by sharing one or two carbon atoms or with an optionallinker, or a derivative thereof. Therefore, the aryl group, that is, themonovalent residue derived from the aromatic compound may refer to asubstituent in which a radical formed by releasing one hydrogen atom ofthe aromatic compound forms a covalent bond, and the arylene group, thatis, the bivalent residue derived from the aromatic compound may refer toa substituent in which a radical formed by releasing two hydrogen atomsof the aromatic compound forms a covalent bond. The aryl group orarylene group may be, for example, an aryl group or arylene group having6 to 30, 6 to 25, 6 to 21, 6 to 18, or 6 to 13 carbon atoms. As the arylgroup or arylene group, a monovalent or bivalent residue derived frombenzene, naphthalene, azobenzene, anthracene, phenanthrene, tetracene,pyrene or benzopyrene may also be used. The term “aromatic structure”used herein may used as the same meaning as the aryl group or arylenegroup.

The aromatic structure may be a structure included in the block mainchain or a structure linked to the block main chain as a side chain. Theabove-described conditions can be adjusted by suitable control of thearomatic structure which can be included in each block.

In one embodiment, the block copolymer satisfying at least one of theconditions may include a first block including a side chain and a secondblock different from the first block. Here, the side chain may be a sidechain having 8 or more chain-forming atoms, which will be describedbelow. The first block may be a block satisfying any one, two or more,or all of Conditions 2, 3, 4 and 5.

The first block may include a ring structure, and the side chain may besubstituted in the ring structure. The ring structure may be theabove-described aromatic structure, an aryl or arylene group, or analicyclic ring structure. Such a ring structure may be a ring structurewithout having a halogen atom.

The “alicyclic ring structure” used herein refers to, unlessparticularly defined otherwise, a cyclic hydrocarbon structure, not anaromatic ring structure. The alicyclic ring structure may be included inthe block copolymer in the form of a monovalent or bivalent residue. Thealicyclic ring structure may be, unless particularly defined otherwise,for example, an alicyclic ring structure having 3 to 30, 3 to 25, 3 to21, 3 to 18, or 3 to 13 carbon atoms.

The second block included along with the first block is a block, whichis chemically different from the first block. The second block may be,for example, a block including a halogen atom, for example, a chlorineatom or fluorine atom. The second block may include 1, 2, 3, 4, 5 ormore halogen atoms. The number of halogen atoms may be, for example, 30,25, 20, 15, 10, 9, 8, 7, 6, 5 or less. The second block may include aring structure, and the halogen atom may be substituted in such a ringstructure. The ring structure may be the above-described aromaticstructure, aryl or arylene group.

The term “side chain” used herein means a chain linked to the main chainof a polymer, and the term “chain-forming atom” means an atom forming alinear structure of the chain as an atom forming the side chain. Theside chain may be linear or branched, but the number of chain-formingatoms may be calculated only as the number of atoms constituting thelongest linear chain, not including another atom binding to thechain-forming atom (for example, when the chain-forming atom is a carbonatom, a hydrogen atom binding to the carbon atom). For example, in thecase of a branched chain, the number of chain-forming atoms may becalculated as the number of chain-forming atoms constituting the longestchain. For example, when the side chain is n-pentyl group, all of thechain-forming atoms are carbons, the number of which is 5, and even whenthe side chain is 2-methylpentyl group, all of the chain-forming atomsare carbon, the number of which is 5. As the chain-forming atom, carbon,oxygen, sulfur or nitrogen may be used, and a suitable chain-formingatom may be carbon, oxygen or nitrogen, or carbon or oxygen. The numberof chain-forming atoms may be 8 or more, 9 or more, 10 or more, 11 ormore, or 12 or more. The number of chain-forming atoms may also, 30 orless, 25 or less, 20 or less, or 16 or less.

To control the above-described condition, a chain having 8 or morechain-forming atoms may be linked to a side chain of the first block ofthe block copolymer. The terms “chain” and “side chain” used herein mayrefer to the same subjects.

The side chain may be, as described above, a chain having 8 or more, 9or more, 10 or more, 11 or more, or 12 or more chain-forming atoms. Thenumber of chain-forming atoms may also be 30 or less, 25 or less, 20 orless, or 16 or less. The chain-forming atom may be a carbon, oxygen,nitrogen or sulfur atom, and preferably, carbon or oxygen.

As a side chain, a hydrocarbon chain such as an alkyl group, an alkenylgroup or an alkynyl group may be used. At least one of the carbon atomsof the hydrocarbon chain may be substituted with a sulfur atom, anoxygen atom or a nitrogen atom.

When the side chain is linked to a ring structure such as an aromaticstructure, the chain may be directly linked to the ring structure, orlinked by means of a linker. As the linker, an oxygen atom, a sulfuratom, —NR₁—, —S(═O)₂—, a carbonyl group, an alkylene group, analkenylene group, an alkynylene group, —C(═O)—X₁— or —X₁—C(═O)— may beused. Here, R₁ is a hydrogen, an alkyl group, an alkenyl group, analkynyl group, an alkoxy group or an aryl group, X₁ is a single bond, anoxygen atom, a sulfur atom, —NR₂—, —S(═O)₂—, an alkylene group, analkenylene group or an alkynylene group, and here, R₂ may be a hydrogen,an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group oran aryl group. As a suitable linker, an oxygen atom may be used. Theside chain may be linked to a ring structure such as an aromaticstructure, for example, by means of an oxygen atom or nitrogen atom.

When the above-described ring structure such as an aromatic structure islinked to the main chain of the block as a side chain, the aromaticstructure may also be directly linked or may be linked to the main chainby means of a linker. In this case, as a linker, an oxygen atom, asulfur atom, —S(═O)₂—, a carbonyl group, an alkylene group, analkenylene group, an alkynylene group, —C(═O)—X₁— or —X₁—C(═O)— may beused, and in this case, X₁ is a single bond, an oxygen atom, a sulfuratom, —S(═O)₂—, an alkylene group, an alkenylene group or an alkynylenegroup. As a suitable linker linking the aromatic structure to the mainchain, —C(═O)—O— or —O—C(═O)— may be used, but the present applicationis not limited thereto.

In another embodiment, the aromatic structure included in the firstand/or second block(s) of the block copolymer may include 1, 2, 3, 4, 5or more halogen atoms. The number of halogen atoms may be, for example,30, 25, 20, 15, 10 or less. As the halogen atom, fluorine or chlorinemay be used, and the fluorine atom is preferably used. As describedabove, the block having the aromatic structure including the halogenatom may efficiently implement a phase-separated structure through asuitable interaction with other blocks.

As the aromatic structure including a halogen atom, an aromaticstructure having 6 to 30, 6 to 25, 6 to 21, 6 to 18, or 6 to 13 carbonatoms may be used, but the present application is not limited thereto.

In the block copolymer, all of the first and second blocks includearomatic structures, in order to implement a suitable phase-separatedstructure, the first block may include an aromatic structure withoutincluding a halogen atom, and the second block may include an aromaticstructure including a halogen atom. Also, the above-described side chainmay be directly linked or linked by means of a linker including oxygenor nitrogen to the aromatic structure of the first block.

When the block copolymer includes a block having a side chain, the blockmay be, for example, a block including the unit represented byFormula 1. The block may be a block including the following unit ofFormula 1 as a main component. The expression “a block includes a unitas a main component” used herein may mean that the block includes theunit at 60, 70, 80, 90, 95% or more based on a weight, or 60, 70, 80,90, 95 mol % or more.

In Formula 1, R is a hydrogen or an alkyl group, X is a single bond, anoxygen atom, a sulfur atom, —S(═O)₂—, a carbonyl group, an alkylenegroup, an alkenylene group, an alkynylene group, —C(═O)—X₁— or—X₁—C(═O)—, and in this case, X₁ is an oxygen atom, a sulfur atom,—S(═O)₂—, an alkylene group, an alkenylene group or an alkynylene group,and Y is a monovalent substituent including a ring structure to whichthe side chain having a chain-forming atom is linked.

In Formula 1, Y is a substituent including at least a ring structure.For example, when the ring structure is an aromatic ring, the number ofchain-forming atoms may be 3 or more, and when the ring structure is analicyclic ring structure, the number of chain-forming atoms may be 8 ormore. Even when the ring structure is an aromatic ring structure, thenumber of chain-forming atoms may be 5, 7, 8 or more.

In Formula 1, X may be, in another embodiment, a single bond, an oxygenatom, a carbonyl group, —C(═O)—O— or —O—C(═O)—, and preferably—C(═O)—O—, but the present application is not limited thereto.

In Formula 1, the monovalent substituent of Y includes a chain structureformed of at least 3 or 8 chain-forming atoms.

As described above, the term “chain-forming atom” used herein refers toa predetermined chain, for example, an atom forming a linear structureof a side chain. The chain may be linear or branched, but the number ofchain-forming atoms is calculated only as the number of atomsconstituting the longest linear chain. A different atom binding to thechain-forming atom (for example, when the chain-forming atom is a carbonatom, a hydrogen atom binding to the carbon atom) is not calculated.Also, in the case of a branched chain, the number of chain-forming atomsmay be calculated as the number of chain-forming atoms constituting thelongest chain. For example, when the chain is an n-pentyl group, thechain-forming atoms are all carbons, the number of which is 5, and evenwhen the chain is a 2-methylpentyl group, the chain-forming atoms areall carbons, the number of which is 5. As the chain-forming atom,carbon, oxygen, sulfur or nitrogen may be used, and a suitablechain-forming atom may be carbon, oxygen or nitrogen, or carbon oroxygen. The number of chain-forming atoms may be 3 or more, 5 or more, 7or more, 8 or more, 9 or more, 10 or more, 11 or more, or 12 or more.The number of chain-forming atoms may also be 30 or less, 25 or less, 20or less, or 16 or less. The suitable lower limit of the number ofchain-forming atoms may be determined by the type of a ring structure asdescribed above.

The block of Formula 1 may allow the block copolymer to have anexcellent self-assembly characteristic and to satisfy the abovecondition.

In one embodiment, the chain may be a linear hydrocarbon chain such as alinear alkyl group. In this case, the alkyl group may be an alkyl grouphaving 3, 5, 7, 8 or more, 8 to 30, 8 to 25, 8 to 20, or 8 to 16 carbonatoms. One or more carbon atoms of the alkyl group may be optionallysubstituted with an oxygen atom, and at least one hydrogen atom of thealkyl group may be optionally substituted with another substituent.

In Formula 1, Y includes a ring structure, and the chain may be linkedto the ring structure. Due to such a ring structure, the self-assemblycharacteristic of the block copolymer may be further improved. The ringstructure may be an aromatic structure, or an alicyclic structure.

The chain may be directly linked, or linked by means of a linker to thering structure. As the linker, an oxygen atom, a sulfur atom, —NR₁—,—S(═O)₂—, a carbonyl group, an alkylene group, an alkenylene group, analkynylene group, —C(═O)—X₁— or —X₁—C(═O)— may be used, and in thiscase, R₁ may be a hydrogen, an alkyl group, an alkenyl group, an alkynylgroup, an alkoxy group or an aryl group, X₁ may be a single bond, anoxygen atom, a sulfur atom, —NR₂—, —S(═O)₂—, an alkylene group, analkenylene group or an alkynylene group, in which R₂ may be a hydrogen,an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group oran aryl group. As a suitable linker, an oxygen atom or a nitrogen atommay be used. The chain may be linked to the aromatic structure, forexample, by means of an oxygen atom or a nitrogen atom. In this case,the linker may be an oxygen atom, or NR₁— (in which R₁ is a hydrogen, analkyl group, an alkenyl group, an alkynyl group, an alkoxy group or anaryl group).

The Y in Formula 1 may be presented by Formula 2.—P-Q-Z  [Formula 2]

In Formula 2, P is an arylene group or a cycloalkylene group, Q is asingle bond, an oxygen atom or —NR₃—, wherein R₃ is a hydrogen, an alkylgroup, an alkenyl group, an alkynyl group, an alkoxy group or an arylgroup, Z is the chain having three or more chain-forming atoms when P isan arylene group, or the chain having 8 or more chain-forming atoms whenP is a cycloalkylene group. When Y in Formula 1 is the substituent ofFormula 2, P of Formula 2 may be directly linked to X of Formula 1.

In Formula 2, as a suitable example, P may be an arylene group having 6to 12 carbon atoms, and for example, a phenoylene group, but the presentapplication is not limited thereto.

In Formula 2, as a suitable example, Q may be an oxygen atom or —NR₁—(wherein R₁ is a hydrogen, an alkyl group, an alkenyl group, an alkynylgroup, an alkoxy group or an aryl group).

As an example of the unit of Formula 1 (hereinafter, may be referred toas a unit of the first block), the unit represented by Formula 3. Such ablock may be referred to as a 1A block unit in the specification, butthe present application is not limited thereto.

In Formula 3, R is a hydrogen or an alkyl group having 1 to 4 carbonatoms, X is a single bond, an oxygen atom, —C(═O)—O— or —O—C(═O)—, P isan arylene group, Q is an oxygen atom or —NR₃—, wherein R₃ is ahydrogen, an alkyl group, an alkenyl group, an alkynyl group, an alkoxygroup or an aryl group, and Z is a linear chain having 8 or morechain-forming atoms. In another embodiment, in Formula 3, Q may be anoxygen atom.

In another embodiment, the unit of the first block may be represented byFormula 4. Such a unit may be called a 1B block unit in thespecification.

In Formula 4, R₁ and R₂ are each independently a hydrogen or an alkylgroup having 1 to 4 carbon atoms, X is a single bond, an oxygen atom, asulfur atom, —S(═O)₂—, a carbonyl group, an alkylene group, analkenylene group, an alkynylene group, —C(═O)—X₁— or —X₁—C(═O)—, whereinX₁ is a single bond, an oxygen atom, a sulfur atom, —S(═O)₂—, analkylene group, an alkenylene group or an alkynylene group, T is asingle bond or an arylene group, Q is a single bond or a carbonyl group,and Y is a chain having 8 or more chain-forming atoms.

In the 1B block unit represented by Formula 4, X may be a single bond,an oxygen atom, a carbonyl group, —C(═O)—O— or —O—C(═O)—.

Specifically, as the chain of Y included in the 1B block unit, a similarone described in Formula 1 may be applied.

In another embodiment, the first block unit may be, in any one ofFormulas 1, 3 and 4, a unit in which at least one chain-forming atom ofthe chain having 8 or more chain-forming atoms has an electronegativityof 3 or higher. The electronegativity of the atom may be, in anotherembodiment, 3.7 or less. In the specification, the unit may be referredto as a 1C block unit. Here, as an atom with an electronegativity of 3or more, a nitrogen atom or an oxygen atom may be used, but the presentapplication is not limited thereto.

The type of another block (hereinafter, may be referred to as a secondblock), which may be included in the block copolymer with the firstblock including the 1A, 1B or 1C block units, is not particularlylimited.

For example, the second block may be a polyvinylpyrrolidone block, apolylactic acid block, a polyvinylpyrridine block, a polystyrene blocksuch as poylstyrene or poly trimethylsilylstyrene, a polyalkylene oxideblock such as polyethylene oxide, a polybutadiene block, a polyisopreneblock, or a polyolefin block such as polyethylene. Such a block may bereferred to as a 2A block in the specification.

In one embodiment, as the second block which may be included with thefirst block including the 1A, 1B or 1C block unit, a block having anaromatic structure including at least one halogen atom may be used.

Such a second block may be, for example, a block including the unitrepresented by Formula 5. The unit of Formula 5 may be referred to as a2B block unit in the specification. The second block may include the 2Bblock unit as a main component.

In Formula 5, B is a monovalent substituent having an aromatic structureincluding one or more halogen atoms.

The second block including such a unit may be excellently interactedwith the first block for the block copolymer to have an excellentself-assembly characteristic.

In Formula 5, the aromatic structure may be, for example, an aromaticstructure having 6 to 18 or 6 to 12 carbon atoms.

In addition, as the halogen atom included in Formula 5, a fluorine atomor a chlorine atom may be used, and suitably a fluorine atom may beused, but the present application is not limited thereto.

In one embodiment, B of Formula 5 may be a monovalent substituent havingan aromatic structure having 6 to 12 carbon atoms, which is substitutedwith 1, 2, 3, 4, 5 or more halogen atoms. Here, the upper limit of thenumber of halogen atoms is not particularly limited, and therefore, forexample, 10, 9, 8, 7, 6 or less halogen atoms may be included.

For example, the 2B block unit of Formula 5 may be represented byFormula 6.

In Formula 6, X₂ is a single bond, an oxygen atom, a sulfur atom,—S(═O)₂—, an alkylene group, an alkenylene group, an alkynylene group,—C(═O)—X₁— or —X₁—C(═O)—, wherein X₁ is a single bond, an oxygen atom, asulfur atom, —S(═O)₂—, an alkylene group, an alkenylene group or analkynylene group, and W is an aryl group including at least one halogenatom. Here, W may be an aryl group substituted with at least one halogenatom, for example, an aryl group having 6 to 12 carbon atoms substitutedwith 2, 3, 4, 5 or more halogen atoms.

The 2B block unit may be represented by, for example, Formula 7.

In Formula 7, X₂ is a single bond, an oxygen atom, a sulfur atom,—S(═O)₂—, an alkylene group, an alkenylene group, an alkynylene group,—C(═O)—X1- or —X1-C(═O)—, wherein X₁ is a single bond, an oxygen atom, asulfur atom, —S(═O)2-, an alkylene group, an alkenylene group or analkynylene group, R₁ to R₅ may be each independently a hydrogen, analkyl group, a haloalkyl group or a halogen atom, and the number ofhalogen atoms including R₁ to R₅ is 1 or more.

In Formula 7, X₂ may be, in another embodiment, a single bond, an oxygenatom, an alkylene group, —C(═O)—O— or —O—C(═O)—.

In Formula 7, R₁ to R₅ are each independently a hydrogen, an alkylgroup, a haloalkyl group or a halogen atom, and may include 1 or more, 2or more, 3 or more, 4 or more, or 5 or more halogen atoms, for example,fluorine atoms. The number of the halogen atoms, for example, thefluorine atoms, included in R₁ to R₅ may be 10 or less, 9 or less, 8 orless, 7 or less, or 6 or less.

In one embodiment, the second block may be a block including the unitrepresented by Formula 8. The unit of Formula 8 may be referred to as a2C block unit in the specification. The second block may include the 2Cblock unit as a main component.

In Formula 8, T and K are each independently an oxygen atom or a singlebond, and U is an alkylene group.

In one embodiment, the 2C block unit may be a block in which U inFormula 10 may be an alkylene group having 1 to 20, 1 to 16, 1 to 12, 1to 8, or 1 to 4 carbon atoms.

The 2C block unit may be a block in which any one of T and K of Formula8 may be a single bond, and the other one may be an oxygen atom. Such ablock may be a block in which U is an alkylene group having 1 to 20, 1to 16, 1 to 12, 1 to 8, or 1 to 4 carbon atoms.

The 2C block unit may be a block in which all of T and K of Formula 8are oxygen atoms. Such a block may be a block in which U is an alkylenegroup having 1 to 20, 1 to 16, 1 to 12, 1 to 8, or 1 to 4 carbon atoms.

The second block may be, in another embodiment, a block including one ormore metal atoms or metalloid atoms. Such a block may be referred to asa 2D block in the specification. Such a block may improve etchselectivity, for example, when an etching process is performed on theself-assembled film formed using the block copolymer.

As the metal or metalloid atom included in the 2D block, a silicon atom,an iron atom or a boron atom may be used, but any one that can showsuitable etch selectivity caused by a difference from other atomsincluded in the block copolymer is used without particular limitation.

The 2D block may include 1, 2, 3, 4, 5 or more halogen atoms, forexample, fluorine atoms, in addition to the metal or metalloid atom. Thenumber of the halogen atoms such as fluorine atoms included in the 2Dblock may be 10, 9, 8, 7, 6 or less.

The 2D block may include the unit represented by Formula 9 (2D blockunit). The 2D block may include the unit of Formula 9 as a maincomponent.

In Formula 9, B may be a monovalent substituent having a substituentincluding a metal atom or a metalloid atom and an aromatic structureincluding a halogen atom.

The aromatic structure of Formula 9 may be an aromatic structure having6 to 12 carbon atoms, for example, an aryl group or an arylene group.

The 2D block unit of Formula 9 may be, for example, represented byFormula 10.

In Formula 10, X₂ is a single bond, an oxygen atom, a sulfur atom,—NR₁—, —S(═O)₂—, an alkylene group, an alkenylene group, an alkynylenegroup, —C(═O)—X₁— or —X₁—C(═O)—, wherein R₁ is a hydrogen, an alkylgroup, an alkenyl group, an alkynyl group, an alkoxy group or an arylgroup, X₁ is a single bond, an oxygen atom, a sulfur atom, —NR₂—,—S(═O)₂—, an alkylene group, an alkenylene group or an alkynylene group,and W is an aryl group having a substituent including a metal atom or ametalloid atom and at least one halogen atom.

Here, W may be an aryl group having 6 to 12 carbon atoms, which has asubstituent including a metal atom or a metalloid atom and at least onehalogen atom.

In such an aryl group, at least 1 or 1 to 3 substituents including ametal atom or a metalloid atom may be included, and 1, 2, 3, 4, 5 ormore halogen atoms may be included.

Here, 10 or less, 9 or less, 8 or less, 7 or less, or 6 or less halogenatoms may be included.

The 2D block unit of Formula 10 may be represented by, for example,Formula 11.

In Formula 11, X₂ a single bond, an oxygen atom, a sulfur atom, —NR₁—,—S(═O)₂—, an alkylene group, an alkenylene group, an alkynylene group,—C(═O)—X₁— or —X₁—C(═O)—, wherein R₁ is a hydrogen, an alkyl group, analkenyl group, an alkynyl group, an alkoxy group or an aryl group, X₁ isa single bond, an oxygen atom, a sulfur atom, —NR₂—, —S(═O)₂—, analkylene group, an alkenylene group or an alkynylene group, R₁ to R₅ areeach independently a hydrogen, an alkyl group, a haloalkyl group, ahalogen atom, or a substituent including a metal or metalloid atom. Atleast one of R₁ to R₅ is a halogen atom, and at least one of R₁ to R₅ isa substituent including a metal or metalloid atom.

In Formula 11, at least 1, 1 to 3, or 1 to 2 of R₁ to R₅ may besubstituents including above-described a metal or metalloid atom.

In Formula 11, in R₁ to R₅, 1, 2, 3, 4, 5 or more halogen atoms may beincluded. The number of halogen atoms included in R₁ to R₅ may be 10, 9,8, 7, 6 or less.

As described above, as the substituent including a metal or metalloidatom, a trialkylsiloxy group, a ferrocenyl group, a silsesquioxanylgroup such as a polyhedral oligomeric silsesquioxane group, or acarboranyl group may be used, and such a substituent may be any oneselected to ensure etch selectivity, including at least one metal ormetalloid atom, without particular limitation.

In another embodiment, the second block may be a block including an atomwith an electronegativity of 3 or higher, not a halogen atom(hereinafter, may be referred to as a non-halogen atom). The blockdescribed above may be referred to as a 2E block in the specification.In another embodiment, the electronegativity of the non-halogen atomincluded in the 2E block may be 3.7 or less.

As the non-halogen atom included in the 2E block, a nitrogen atom or anoxygen atom may be used, but the present application is not limitedthereto.

The 2E block may include 1, 2, 3, 4, 5 or more halogen atoms, forexample, fluorine atoms, along with the non-halogen atom with anelectronegativity of 3 or higher. The number of the halogen atoms suchas the fluorine atoms included in the 2E block may be 10, 9, 8, 7, 6 orless.

The 2E block may include may include the unit represented by Formula 12(the 2E block unit). The unit may be included in the 2E block as a maincomponent.

In Formula 12, B may be a monovalent substituent, which has asubstituent including a non-halogen atom with an electronegativity of 3or more and an aromatic structure including a halogen atom.

The aromatic structure of Formula 12 may be an aromatic structure having6 to 12 carbon atoms, for example, an aryl group or an arylene group.

In another embodiment, the unit of Formula 12 may be represented byFormula 13.

In Formula 13, X₂ is a single bond, an oxygen atom, a sulfur atom,—NR₁—, —S(═O)₂—, an alkylene group, an alkenylene group, an alkynylenegroup, —C(═O)—X₁— or —X₁—C(═O)—, wherein R₁ is a hydrogen, an alkylgroup, an alkenyl group, an alkynyl group, an alkoxy group or an arylgroup, X₁ is a single bond, an oxygen atom, a sulfur atom, —NR₂—,—S(═O)₂—, an alkylene group, an alkenylene group or an alkynylene group,and W is an aryl group, which includes a substituent including anon-halogen atom with an electronegativity of 3 or more and at least onehalogen atom.

Here, W may be an aryl group having 6 to 12 carbon atoms, which includesa substituent including a non-halogen atom with an electronegativity of3 or more and at least one halogen atom.

In such an aryl group, the number of the substituents including anon-halogen atom with an electronegativity of 3 or more may be at least1 or 1 to 3. Also, the number of the halogen atoms may be 1, 2, 3, 4, 5or more. Here, the number of halogen atoms may be 10, 9, 8, 7, 6 orless.

In another embodiment, the unit of Formula 13 may be represented byFormula 14.

In Formula 14, X₂ is a single bond, an oxygen atom, a sulfur atom,—NR₁—, —S(═O)₂—, an alkylene group, an alkenylene group, an alkynylenegroup, —C(═O)—X₁— or —X₁—C(═O)—, wherein R₁ is a hydrogen, an alkylgroup, an alkenyl group, an alkynyl group, an alkoxy group or an arylgroup, X₁ is a single bond, an oxygen atom, a sulfur atom, —NR₂—,—S(═O)₂—, an alkylene group, an alkenylene group or an alkynylene group,R₁ to R₅ are each independently a hydrogen, an alkyl group, a haloalkylgroup, a halogen atom and a substituent including a non-halogen atomwith an electronegativity of 3 or more. At least one of R₁ to R₅ is ahalogen atom, and at least one of R₁ to R₅ is a substituent including anon-halogen atom with an electronegativity of 3 or more.

In Formula 14, at least 1, 1 to 3, or 1 to 2 of R₁ to R₅ may be theabove-described substituents including a non-halogen atom with anelectronegativity of 3 or more.

In Formula 14, R₁ to R₅ may include 1, 2, 3, 4, 5 or more halogen atoms.R₁ to R₅ may include 10, 9, 8, 7, 6 or less halogen atoms.

As described above, as the substituent including a non-halogen atom withan electronegativity of 3 or more, a hydroxyl group, an alkoxy group, acarboxyl group, an amido group, an ethylene oxide group, a nitrilegroup, a pyridine group, or an amino group, but the present applicationis not limited thereto.

In another embodiment, the second block may include an aromaticstructure having a heterocyclic substituent. Such a second block may bereferred to as a 2F block in the specification.

The 2F block may include the unit represented by Formula 15. Thefollowing unit may be included in the 2F block as a main component.

In Formula 15, B is a monovalent substituent having an aromaticstructure having 6 to 12 carbon atoms, which is substituted with aheterocyclic substituent.

The aromatic structure of Formula 15 may include one or more halogenatom, when necessary.

The unit of Formula 15 may be represented by Formula 16.

In Formula 16, X₂ is a single bond, an oxygen atom, a sulfur atom,—NR₁—, —S(═O)₂, an alkylene group, an alkenylene group, an alkynylenegroup, —C(═O)—X₁— or —X₁—C(═O)—, wherein R₁ is a hydrogen, an alkylgroup, an alkenyl group, an alkynyl group, an alkoxy group or an arylgroup, X₁ is a single bond, an oxygen atom, a sulfur atom, —NR₂—,—S(═O)₂—, an alkylene group, an alkenylene group or an alkynylene group,and W is an aryl group having 6 to 12 carbon atoms, which has aheterocyclic substituent.

The unit of Formula 16 may be represented by Formula 17.

In Formula 17, X₂ is a single bond, an oxygen atom, a sulfur atom,—NR1-, —S(═O)2-, an alkylene group, an alkenylene group, an alkynylenegroup, —C(═O)—X₁— or —X₁—C(═O)—, wherein R₁ is a hydrogen, an alkylgroup, an alkenyl group, an alkynyl group, an alkoxy group or an arylgroup, and X₁ is a single bond, an oxygen atom, a sulfur atom, —NR2-,—S(═O)2-, an alkylene group, an alkenylene group or an alkynylene group.R₁ to R₅ may be each independently a hydrogen, an alkyl group, ahaloalkyl group, a halogen atom and a heterocyclic substituent, and atleast one of R₁ to R₅ is a heterocyclic substituent.

In Formula 17, at least one, for example, 1 to 3 or 1 to 2 of R₁ to R₅are the heterocyclic substituents, and the other may be a hydrogen atom,an alkyl group or a halogen atom, a hydrogen atom or a halogen atom, ora hydrogen atom.

As the above-described heterocyclic substituent, a phthalimide-basedsubstituent, a thiopene-based substituent, a thiazole-based substituent,a carbazol-based substituent, or an imidazol-based substituent may beused, but the present application is not limited thereto.

The block copolymer of the present application may include one or moreof the above-described first blocks, and one or more of theabove-described second blocks. Such a block copolymer may include two,three or more blocks. For example, the block copolymer may be a diblockcopolymer including any one of the first blocks and the any one of thesecond blocks.

A specific method of preparing the above-described block copolymer isnot particularly limited, and for example, the block copolymer may beprepared by performing a known method of preparing a block copolymer ona monomer capable of forming each block.

For example, the block copolymer may be prepared by a living radicalpolymerization (LRP) method using the monomer. For example, anionicpolymerization for synthesizing a block copolymer using an organic rareearth metal complex as a polymerization initiator or using an organicalkali metal compound as a polymerization initiator in the presence ofan inorganic acid salt such as a salt of an alkali metal or alkali earthmetal, atom transfer radical polymerization (ATRP) using an atomtransfer radical polymerizer as a polymerization control agent,activators regenerated by electron transfer (ARGET) atom transferradical polymerization (ATRP) performing polymerization using an atomtransfer radical polymerizer as a polymerization control agent in thepresence of an organic or inorganic reducing agent generating electrons,initiators for continuous activator regeneration (ICAR) atom transferradical polymerization (ATRP), reversible addition-fragmentation chaintransfer (RAFT) using an inorganic reducing agent RAFT agent, or amethod using an organic tellurium compound as an initiator may be used,and a suitable one may be selected from the above-described methods.

For example, the block copolymer may be prepared by a method includingpolymerizing a reactant including monomers capable of forming the blockthrough living radical polymerization in the presence of a radicalinitiator and a living radical polymerization reagent.

A method of forming another block included in the copolymer as well asthe block formed using the monomer during the preparation of a blockcopolymer is not particularly limited, and the block may be formed byselecting a suitable monomer by considering the type of a desired block.

The process of preparing a block copolymer may further include, forexample, precipitating a polymerization product produced through theabove-described process in a non-solvent.

The type of a radical initiator is not particularly limited, andtherefore a radical initiator may be suitably selected by consideringpolymerization efficiency. For example, as a radical initiator, an azocompound such as azobisisobutyronitrile (AIBN) or2,2′-azobis-(2,4-dimethylvaleronitrile), or a peroxide such as benzoylperoxide (BPO) or di-t-butyl peroxide (DTBP) may be used.

The living radical polymerization may be performed in a solvent such asmethylene chloride, 1,2-dichloroethane, chlorobenzene, dichlorobenzene,bezene, toluene, acetone, chloroform, tetrahydrofuran, dioxane,monoglyme, diglyme, dimethylformamide, dimethylsulfoxide ordimethylacetamide.

As a non-solvent, for example, an alcohol such as methanol, ethanol,normal propanol or isopropanol, a glycol such as ethyleneglycol, or anether such as n-hexane, cyclohexane, n-heptane or petroleum ether may beused, but the present application is not limited thereto.

A method of forming a film on the above-described trench using theabove-described block copolymer is not particularly limited, and to forma self-assembly structure, for example, a known method has been appliedto form a polymer layer on a neutral-treated surface may be applied. Forexample, a polymer layer may be formed by preparing a coating solutionby dispersing the block copolymer in a suitable solvent at apredetermined concentration, and coating the coating solution by a knowncoating method such as spin coating.

When necessary, an annealing process may be further performed to form aself-assembly structure on the polymer layer formed as described above.Such annealing may be performed by, for example, annealing orthermal-treating the layer. The annealing or thermal treatment may beperformed based on a phase transition temperature or a glass transitiontemperature of the block copolymer, for example, at a temperature whichis the same as or higher than the glass transition temperature or phasetransition temperature. Time for such thermal treatment may be, but isnot particularly limited to, for example, in a range of about 1 minuteto 72 hours, and may be changed as necessary. Also, a temperature forthe thermal treatment to the polymer thin film may be, for example,about 100 to 250° C., but may be changed by considering the blockcopolymer used herein.

In another embodiment, the formed layer may be annealed in a non-polarsolvent and/or polar solvent at room temperature for about 1 minute to72 hours.

Also, a method of manufacturing a patterned substrate of the presentapplication may additionally include selectively removing any one blockfrom the self-assembled block copolymer of the film formed in the trenchas described above. For example, when the block copolymer includes theabove-described first block and second block, the method may includeselectively removing the first or second block from the block copolymer.Through such a process, for example, as shown in FIG. 3, only a block(B) which is not selectively removed may be present in a trench. Themethod of manufacturing a patterned substrate may further includeetching the substrate, after any one or more blocks are selectivelyremoved from the block copolymer.

In this method, a method of selectively removing any one block of theblock copolymer is not particularly limited, and for example, a methodof removing a relatively soft block by irradiating a polymer layer witha suitable electromagnetic wave such as an ultraviolet (UV) ray may beused. In this case, conditions for UV irradiation may be determined bythe type of a block of the block copolymer, and for example, the UVirradiation may be performed by applying an UV ray with a wavelength ofabout 254 nm for 1 to 60 minutes.

Also, after the UV irradiation, removal of a segment degraded by the UVray through treatment of the polymer layer with an acid may beperformed.

Also, etching of the substrate using the polymer layer from which ablock is selectively removed as a mask is not particularly limited, andmay be performed through reactive ion etching using CF4/Ar ions. In thisprocess, removal of the polymer layer from the substrate through oxygenplasma treatment may be further performed.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows an illustrative embodiment of a substrate on which a trenchis formed.

FIG. 2 schematically shows that a self-assembled polymer is formed inthe trench of the substrate.

FIG. 3 schematically shows that any one block of the self-assembledblock copolymer is selectively removed.

FIGS. 4 to 8 are SEM images of polymer layers formed by block copolymersof preparation examples 6 to 10.

FIG. 9 shows a structure including a substrate and a mesa structureformed on the surface of the substrate.

FIG. 10 is an SEM image of a self assembled structure formed in Example1.

EFFECT

The present application relates to a method of manufacturing a patternedsubstrate. The method may be applied to a process of manufacturingdevices such as an electronic device and an integrated circuit, oranother use, for example, to manufacture an integrated optical system, aguidance and detection pattern of a magnetic domain memory, a flat paneldisplay, a LCD, a thin film magnetic head or an organic light emittingdiode, and used to construct a pattern on a surface to be used tomanufacture a discrete tract medium such as an integrated circuit, abit-patterned medium and/or a magnetic storage device such as a harddrive.

DETAILED DESCRIPTION OF EMBODIMENTS

Hereinafter, the present application will be described in further detailwith reference to examples according to the present application, but thescope of the present application is not limited to the followingexamples.

1. NMR Analysis

NMR analysis was performed at room temperature using an NMR spectrometerincluding a Varian Unity Inova (500 MHz) spectrometer having a tripleresonance 5 mm probe. A subject for analysis was diluted with a solvent(CDCl₃) for measuring NMR at a concentration of about 10 mg/ml, andchemical shift was expressed in ppm.

Abbreviations

br=broad signal, s=singlet, d=doublet, dd=doublet of doublets,t=triplet, dt=doublet of triblets, q=quartet, p=quintet, m=multiplet.

2. Gel Permeation Chromatography (GPC)

A number average molecular weight (Mn) and a distribution of molecularweight were measured by GPC. A subject for analysis such as a blockcopolymer or macro initiator of Example or Comparative Example was putinto 5 ml vial, and diluted with tetrahydrofuran (THF) to have aconcentration of about 1 mg/mL. Afterward, a standard sample forCalibration and a sample for analysis were measured after passingthrough a syringe filter (pore size: 0.45 μm). As an analysis program,ChemStation produced by Agilent technologies was used, and an elutiontime for the sample was compared with a calibration curve, therebyobtaining a weight average molecular weight (Mw) and a number averagemolecular weight (Mn), and a ratio (Mw/Mn) was used to calculate apolydispersity index (PDI). Conditions for measuring GPC are as follows.

<Conditions for Measuring GPC>

Device: 1200 series produced by Agilent technologies

Column: Two PLgel mixed B produced by Polymer laboratories

Solvent: THF

Column temperature: 35° C.

Sample concentration: 1 mg/mL, 200 L injection

Standard sample: Polystyrene (Mp: 3900000, 723000, 316500, 52200, 31400,7200, 3940, 485)

3. Method for XRD Analysis

XRD analysis was performed by measuring a scattering intensity accordingto a scattering vector (q) by irradiating a sample with an X ray using aPohang light source 4C beam line. As a sample, a powder-type blockcopolymer was obtained by purifying a synthesized block copolymerwithout specific pretreatment and drying the block copolymer in a vacuumoven for about one day, and put into a cell for XRD measurement. In XRDpattern analysis, an X ray having a vertical size of 0.023 mm and ahorizontal size of 0.3 mm was used, and a 2D marCCD was used as adetector. A 2D diffraction pattern obtained by scattering was obtainedan image. Information such as a scattering vector and a FWHM wereobtained by analyzing the obtained diffraction pattern by numericalanalysis method using the least square method. For the analysis, anorigin program was applied, a part showing the least intensity in an XRDdiffraction pattern was set as a baseline to make the intensity 0, aprofile of the XRD pattern peak was fitted by Gaussian fitting, and thescattering vector and the FWHM was obtained from the fitted result. Inthe Gauss fitting, the R square was set to at least 0.96 or more.

4. Measurement of Surface Energy

Surface energy was measured using a drop-shape analyzer (DSA100, KRUSS).A coating solution was prepared by diluting a material for detection(polymer) with fluorobenzene at a solid content concentration of about 2wt %, and the prepared coating solution was applied on a silicon waferby spin coating to have a thickness of about 50 nm and a coating area of4 cm² (width: 2 cm, length: 2 cm). The coating layer was dried at roomtemperature for about 1 hour, and then thermal-annealed at about 160° C.for about 1 hour. Deionized water having a known surface tension wasdropped on the film undergoing the thermal annealing, and a mean valueof five contact angles obtained by repeating measurement of contactangles five times. Likewise, diiodomethane having a known surfacetension was dropped on the film undergoing the thermal annealing, and amean value of five contact angles obtained by repeating measurement ofcontact angles five times. Surface energy was obtained by substituting aStrom value with respect to the surface tension of the solvent throughthe Owens-Wendt-Rabel-Kaelble method using the obtained mean values ofthe contact angles for the deionized water and diiodomethane. The valueof surface energy for each block of the block copolymer was obtained bythe above-described method applied to a homopolymer prepared only usinga monomer for forming the block.

5. Measurement of Volume Fraction

The volume fraction of each block of the block copolymer was calculatedbased on a density, measured at room temperature, and a molecularweight, measured by GPC, of the block. Here, the density was measured bya buoyancy method, and specifically, calculated based on a weight of asample for analysis after put into a solvent (ethanol) having a knownweight and density in the air.

Preparation Example 1. Synthesis of Monomer (A)

A compound of Formula A (DPM-C12) was synthesized by the followingmethod. Hydroquinone (10.0 g, 94.2 mmol) and 1-bromododecane (23.5 g,94.2 mmol) were put into a 250 mL flask, dissolved in 100 mLacetonitrile, treated with an excessive amount of potassium carbonate toallow a reaction at 75° C. for about 48 hours under a nitrogencondition. After the reaction, remaining potassium carbonate wasfiltered to remove, and the acetonitrile used in the reaction was alsoremoved. Here, a mixed solvent of dichloromethane (DCM) and water wasadded to work up, and a separated organic layer was dehydrated withMgSO₄. Therefore, a white solid product (4-dodecyloxyphenol; 9.8 g, 35.2mmol) was obtained with an yield of about 37% through columnchromatography using DCM.

<NMR Analysis Result>

¹H-NMR (CDCl₃): δ6.77 (dd, 4H); δ4.45 (s, 1H); δ3.89 (t, 2H); δ1.75 (p,2H); δ1.43 (p, 2H); δ1.33-1.26 (m, 16H); δ0.88 (t, 3H).

Synthesized 4-dodecyloxyphenol (9.8 g, 35.2 mmol), methacrylic acid (6.0g, 69.7 mmol), dicyclohexylcarbodiimide (DCC; 10.8 g, 52.3 mmol) andp-dimethylaminopyridine (DMAP; 1.7 g, 13.9 mmol) were put into a flask,and treated with 120 mL of methylenechloride to allow a reaction at roomtemperature for 24 hours under nitrogen. After the reaction wascompleted, a salt produced in the reaction (urea salt) was removed usinga filter, and remaining methylenechloride was also removed. Debris wasremoved through column chromatography using hexane and dichloromethane(DCM) as moving phases, and then a product thereby was recrystallized ina mixed solvent of methanol and water (1:1 mixture), thereby obtaining awhite solid product (7.7 g, 22.2 mmol) with an yield of 63%.

<NMR Analysis Result>

¹H-NMR (CDCl₃): δ7.02 (dd, 2H); δ6.89 (dd, 2H); δ6.32 (dt, 1H); δ5.73(dt, 1H); δ3.94 (t, 2H); δ2.05 (dd, 3H); δ1.76 (p, 2H); δ1.43 (p, 2H);1.34-1.27 (m, 16H); δ0.88 (t, 3H).

In Formula A, R is a linear alkyl group having 12 carbon atoms.

Preparation Example 2. Synthesis of Monomer (B)

A compound of Formula B was synthesized by the method according toPreparation Example 1, except that 1-bromooctane, instead of1-bromododecane, was used. The NMR analysis result for the compound isshown below.

<NMR Analysis Result>

¹H-NMR (CDCl₃): δ7.02 (dd, 2H); δ6.89 (dd, 2H); δ6.32 (dt, 1H); δ5.73(dt, 1H); δ3.94 (t, 2H); δ2.05 (dd, 3H); δ1.76 (p, 2H); δ1.45 (p, 2H);1.33-1.29 (m, 8H); δ0.89 (t, 3H).

In Formula B, R is a linear alkyl group having 8 carbon atoms.

Preparation Example 3. Synthesis of Monomer (C)

A compound of Formula C was synthesized by the method according toPreparation Example 1, except that 1-bromodecane, instead of1-bromododecane, was used. The NMR analysis result for the compound isshown below.

<NMR Analysis Result>

¹H-NMR (CDCl₃): δ7.02 (dd, 2H); δ6.89 (dd, 2H); δ6.33 (dt, 1H); δ5.72(dt, 1H); δ3.94 (t, 2H); δ2.06 (dd, 3H); δ1.77 (p, 2H); δ1.45 (p, 2H);1.34-1.28 (m, 12H); δ0.89 (t, 3H).

In Formula C, R is a linear alkyl group having 10 carbon atoms.

Preparation Example 4. Synthesis of Monomer (D)

A compound of Formula D was synthesized by the method according toPreparation Example 1, except that 1-bromotetradecane, instead of1-bromododecane, was used. The NMR analysis result for the compound isshown below.

<NMR Analysis Result>

¹H-NMR (CDCl₃): δ7.02 (dd, 2H); δ6.89 (dd, 2H); δ6.33 (dt, 1H); δ5.73(dt, 1H); δ3.94 (t, 2H); δ2.05 (dd, 3H); δ1.77 (p, 2H); δ1.45 (p, 2H);1.36-1.27 (m, 20H); δ0.88 (t, 3H)

In Formula D, R is a linear alkyl group having 14 carbon atoms.

Preparation Example 5. Synthesis of Monomer (E)

A compound of Formula E was synthesized by the method according toPreparation Example 1, except that 1-bromohexadetane, instead of1-bromododecane, was used. The NMR analysis result for the compound isshown below.

<NMR Analysis Result>

¹H-NMR (CDCl₃): δ7.01 (dd, 2H); δ6.88 (dd, 2H); δ6.32 (dt, 1H); δ5.73(dt, 1H); δ3.94 (t, 2H); δ2.05 (dd, 3H); δ1.77 (p, 2H); δ1.45 (p, 2H);1.36-1.26 (m, 24H); δ0.89 (t, 3H)

In Formula E, R is a linear alkyl group having 16 carbon atoms.

Preparation Example 6. Synthesis of Block Copolymer

2.0 g of the monomer (A) of Preparation Example 1, 64 mg of a reversibleaddition-fragmentation chain transfer (RAFT) reagent,cyanoisopropyldithiobenzoate, 23 mg of a radical initiator,azobisisobutyronitrile (AIBN), and 5.34 ml of benzene were put into a 10mL Schlenk flask, and stirred at room temperature for 30 minutes under anitrogen atmosphere to allow an RAFT polymerization reaction at 70° C.for 4 hours. After the polymerization, a reaction solution wasprecipitated in 250 ml of methanol as an extraction solvent, and driedthrough decreased pressure filtration, thereby preparing a pinkmacroinitiator. The yield of the macroinitiator was about 82.6 wt %, andthe number average molecular weight (Mn) and distribution of molecularweight (Mw/Mn) of the macroinitiator were 9,000 and 1.16, respectively.0.3 g of the macroinitiator, 2.7174 g of a pentafluorostyrene monomerand 1.306 ml of benzene were put into a 10 mL Schlenk flask, and stirredat room temperature for 30 minutes under a nitrogen atmosphere to allowan RAFT polymerization reaction at 115° C. for 4 hours. After thepolymerization, a reaction solution was precipitated in 250 ml ofmethanol as an extraction solvent, and dried through decreased pressurefiltration, thereby preparing a light pink block copolymer. The yield ofthe block copolymer was about 18 wt %, and the number average molecularweight (Mn) and distribution of molecular weight (Mw/Mn) of the blockcopolymer were 16,300 and 1.13, respectively. The block copolymerincludes a first block derived from the monomer (A) of PreparationExample 1 and a second block derived from the pentafluorostyrenemonomer.

Preparation Example 7. Synthesis of Block Copolymer

A block copolymer was prepared using a macroinitiator and apentafluorostyrene as monomers by the method according to PreparationExample 6, except that the monomer (B) of Preparation Example 2, insteadof the monomer (A) of Preparation Example 1, was used. The blockcopolymer includes a first block derived from the monomer (B) ofPreparation Example 2 and a second block derived from thepentafluorostyrene monomer.

Preparation Example 8. Synthesis of Block Copolymer

A block copolymer was prepared using a macroinitiator and apentafluorostyrene as monomers by the method according to PreparationExample 6, except that the monomer (C) of Preparation Example 3, insteadof the monomer (A) of Preparation Example 1, was used. The blockcopolymer includes a first block derived from the monomer (C) ofPreparation Example 3 and a second block derived from thepentafluorostyrene monomer.

Preparation Example 9. Synthesis of Block Copolymer

A block copolymer was prepared using a macroinitiator and apentafluorostyrene as monomers by the method according to PreparationExample 6, except that the monomer (D) of Preparation Example 4, insteadof the monomer (A) of Preparation Example 1, was used. The blockcopolymer includes a first block derived from the monomer (D) ofPreparation Example 4 and a second block derived from thepentafluorostyrene monomer.

Preparation Example 10. Synthesis of Block Copolymer

A block copolymer was prepared using a macroinitiator and apentafluorostyrene as monomers by the method according to PreparationExample 6, except that the monomer (E) of Preparation Example 5, insteadof the monomer (A) of Preparation Example 1, was used. The blockcopolymer includes a first block derived from the monomer (E) ofPreparation Example 5 and a second block derived from thepentafluorostyrene monomer.

GPC results for the macroinitiators and the block copolymers prepared inthe above Preparation Examples are summarized and listed in Table 1.

TABLE 1 Preparation Example 6 7 8 9 10 MI Mn 9000 9300 8500 8700 9400PDI 1.16 1.15 1.17 1.16 1.13 BCP Mn 16300 19900 17100 17400 18900 PDI1.13 1.20 1.19 1.17 1.17 MI: macroinitiator BCP: block copolymer Mn:number average molecular weight PDI: polydispersity index

Experiment Example 1. X-Ray Diffraction Analysis

Results for analyzing XRD patterns for the block copolymers by theabove-described methods are summarized and listed in Table 2.

TABLE 2 Preparation Example 6 7 8 9 10 q peak value (unit: nm⁻¹) 1.962.41 2.15 1.83 1.72 FWHM (unit: nm⁻¹) 0.57 0.72 0.63 0.45 0.53

Experiment Example 2. Evaluation of Self Assembling Properties

A coating solution prepared by diluting the block copolymer prepared inthe preparation example 6, 7, 8, 9 or 10 in toluene so as to have 1weight % of solid content was spin coated on a silicon wafer (coatingarea: width×length=1.5 cm×1.5 cm) so as to have a thickness of about 50nm, the coated coating solution was dried under a room temperature forabout an hour and then was subjected to a thermal annealing at 160° C.for about an hour so as to form a self assembled layer. The SEM(Scanning Electron Microscope) analysis was performed to each of theformed layers. FIGS. 4 to 8 are the SEM images of the layers formed bythe block copolymers of preparation examples 6 to 10. As confirmed fromthe figures, in a case of the block copolymer, a polymer layer that wasself assembled in a line shape was effectively formed.

Experiment Example 3. Evaluation of Physical Properties of BlockCopolymer

Results of evaluating properties of the block copolymers prepared inPreparation Examples 6 to 10 by the method described above aresummarized and listed in Table 3.

TABLE 3 Preparation Example 6 7 8 9 10 First SE 30.83 31.46 27.38 26.92427.79 block De 1 1.04 1.02 0.99 1.00 VF 0.66 0.57 0.60 0.61 0.61 SecondSE 24.4 24.4 24.4 24.4 24.4 block De 1.57 1.57 1.57 1.57 1.57 VF 0.340.43 0.40 0.39 0.39 SE difference 6.43 7.06 2.98 2.524 3.39 Dedifference 0.57 0.53 0.55 0.58 0.57 Chain-forming 12 8 10 14 16 atom n/D3.75 3.08 3.45 4.24 4.44 SE: surface energy(unit: mN/m) De:density(unit: g/cm³) VF: volume fraction SE difference: absolute valueof difference in surface energy between first block and second block Dedifference: absolute value of difference in density between first blockand second block Chain-forming atom: the number of chain-forming atomsof first block n/D: value calculated by Equation 1 (nq/(2 × π)) (n: thenumber of chain-forming atoms, q: value of scattering vector showingpeak having the largest peak area in range of scattering vector from 0.5nm⁻¹ to 10 nm⁻¹) Ref: polystyrene-polymethylmethacrylate block copolymer(first block: polystyrene block, second block: polymethylmethacrylateblock)

Example 1

Patterning of a substrate by using the block copolymer of thepreparation example 6 was performed as below. As the substrate, asilicon wafer was used. A layer of SiO₂ was formed on the substrate soas to have a thickness of about 200 nm by a conventional depositingmethod. Then, the BARC (Bottom Anti Reflective Coating) having athickness of about 60 nm was coated on the layer of SiO₂ and then the PR(photoresist) layer (used for KrF, positive-tone resist layer) having athickness of about 400 nm was coated thereon. Then the PR layer waspatterned by a KrF stepper light exposure method. Then, the BARC layerand the layer of SiO₂ were patterned by a RIE (Reactive Ion Etching)method using the patterned PR layer as a mask and residues of the BARClayer and the layer of SiO₂ were eliminated so as to form the mesastructure. FIG. 9 shows a structure including the substrate (10) and themesa structure (20) formed on the surface of the substrate, formed bythe above process. The interval (D) between the mesa structures wasabout 150 nm, the height (H) of the mesa structure was about 100 nm andthe width (W) of the mesa structure was about 150 nm.

A polymer layer using the block copolymer of the preparation example 6was formed within the trench formed by the mesa structures. Anyadditional treatment such as forming the neutral brush layer was notperformed on the trench.

Specifically, a coating solution prepared by diluting the blockcopolymer in toluene so as to have 1.5 weight % of solid content wasspin coated, the coated coating solution was dried under a roomtemperature for about an hour and then was subjected to a thermalannealing at about 160° C. to 250° C. for about an hour so as to form aself assembled layer. FIG. 10 is a SEM (Scanning Electron Microscope)image of the self assembled structure formed as above, and from thefigure, it can be confirmed that a linear property of the self assembledlamella structure has been improved.

Example 2

A self-assembled polymer layer was formed by the same method as inExample 1, except that the block copolymer of Preparation Example 7,instead of the block copolymer of Preparation Example 6, was used. As aresult of confirming the SEM image, it was confirmed that a suitableself-assembly structure is formed as described in Example 1.

Example 3

A self-assembled polymer layer was formed by the same method as inExample 1, except that the block copolymer of Preparation Example 8,instead of the block copolymer of Preparation Example 6, was used. As aresult of confirming the SEM image, it was confirmed that a suitableself-assembly structure is formed as described in Example 1.

Example 4

A self-assembled polymer layer was formed by the same method as inExample 1, except that the block copolymer of Preparation Example 9,instead of the block copolymer of Preparation Example 6, was used. As aresult of confirming the SEM image, it was confirmed that a suitableself-assembly structure is formed as described in Example 1.

Example 5

A self-assembled polymer layer was formed by the same method as inExample 1, except that the block copolymer of Preparation Example 10,instead of the block copolymer of Preparation Example 6, was used. As aresult of confirming the SEM image, it was confirmed that a suitableself-assembly structure is formed as described in Example 1.

What is claimed is:
 1. A method of manufacturing a patterned substrate,comprising: forming a self-assembled structure of a block copolymerwithin a trench on a surface of a substrate, wherein the block copolymerincludes a first block having a ring structure and a side chainsubstituted on the ring structure, the side chain having 3 or morechain-forming atoms, wherein an interface between adjacent domains ofthe block copolymer in the self-assembled structure is substantiallyvertical with respect to the surface of the substrate, wherein thetrench is formed between mesa structures, wherein the mesa structuresare arranged so as to have an interval distance (D) between adjacentmesa structures on the substrate; and wherein the surface of the trenchwhich is directly contacted by the self-assembled structure is notneutralized by a neutral brush layer to facilitate the substantiallyvertical orientation of the interface in the self-assembled structure,wherein the first block having the unit represented by Formula 1:

where R is a hydrogen or an alkyl group, X is an oxygen atom, a sulfuratom, —S(═O)₂—, a carbonyl group, an alkylene group, an alkenylenegroup, an alkynylene group, —C(═O)—X₁— or —X₁—C(═O)—, in which X₁ is anoxygen atom, a sulfur atom, —S(═O)₂—, an alkylene group, an alkenylenegroup or an alkynylene group, and Y is a monovalent substituentcomprising the ring structure with which the side chain is substituted.2. The method of claim 1, wherein the trench is formed by a method,comprising: forming a mesa structure-forming material layer, anantireflection layer, and a resist layer sequentially on the substrate;patterning the resist layer; and etching the mesa structure-formingmaterial layer using the patterned resist layer as a mask to form thetrench.
 3. The method of claim 2, wherein the etching of the mesastructure-forming material layer comprises: reactive ion etching themesa structure-forming material layer.
 4. The method of claim 1, whereina ratio (D/H) of the interval distance (D) to a height (H) ranges from0.1 to
 10. 5. The method of claim 1, wherein a ratio (D/W) of theinterval distance (D) to a width (W) of the mesa structure ranges from0.5 to
 10. 6. The method of claim 1, wherein the self-assembledstructure of the block copolymer is a lamella structure and the intervaldistance (D) ranges from 1 L to 20 L, and wherein the L is a pitch ofthe lamella structure.
 7. The method of claim 1, wherein theself-assembled structure of the block copolymer is a lamella structureand has a thickness ranging from 1 L to 10 L, wherein the L is a pitchof the lamella structure.
 8. The method of claim 1, wherein theself-assembled structure of the block copolymer is a lamella structure.9. The method of claim 1, wherein the block copolymer further comprisesa second block different from the first block, and wherein the firstblock shows a peak at an azimuthal angles of −90 to −70 degrees and of70 to 90 degrees in a diffraction pattern of a scattering vector of 12to 16 nm⁻¹ in a GIWAXS spectrum.
 10. The method of claim 1, wherein theblock copolymer further comprises a second block having a differentchemical structure from the first block, and wherein the first blockshows a melting transition peak or isotropic transition peak in a rangeof −80 to 200° C. through differential scanning calorimetry (DSC)analysis.
 11. The method of claim 1, wherein the block copolymer furthercomprises a second block having a different chemical structure from thefirst block, and wherein the first block shows a peak having a fullwidth at half maximum (FWHM) of 0.2 to 0.9 nm⁻¹ in a scattering vector(q) range of 0.5 to 10 nm⁻¹ through XRD analysis.
 12. The method ofclaim 1, wherein the block copolymer further comprises a second blockhaving a different chemical structure from the first block, wherein thefirst block includes a side chain, and wherein the number ofchain-forming atoms (n) of the side chain and the scattering vector (q)obtained by XRD analysis performed on the first block, satisfy Equation2:3 to 5 nm⁻¹ =nq/(2×π)  [Equation 2] where n is the number ofchain-forming atoms of the side chain, q is the smallest scatteringvector (q) in which a peak is shown through XRD analysis performed on ablock including the side chain, or a scattering vector (q) showing apeak having the largest peak area.
 13. The method of claim 1, whereinthe block copolymer further comprises a second block having a differentchemical structure from the first block, and wherein the absolute valueof a difference in surface energy between the first block and the secondblock is 10 mN/m or less.
 14. The method of claim 1, wherein the blockcopolymer further comprises a second block having a different chemicalstructure from the first block, and wherein the absolute value of adifference in density between the first block and the second block is0.25 g/cm³ or more.
 15. The method of claim 1, wherein the blockcopolymer further comprises a second block different from the firstblock, and wherein a volume fraction of the first block is in a range of0.2 to 0.6, and a volume fraction of the second block is in a range of0.4 to 0.8.
 16. The method of claim 1, wherein the side chain has 5 ormore chain-forming atoms.
 17. The method of claim 1, wherein the ringstructure does not include a halogen atom.
 18. The method of claim 16,wherein the block copolymer further comprises a second block differentfrom the first block, wherein the second block includes 3 or morehalogen atoms.
 19. The method of claim 18, wherein the second blockcomprises a ring structure, and the halogen atoms are substituted in thering structure.
 20. The method of claim 1, wherein Y of Formula 1 isrepresented by Formula 2:—P-Q-Z  [Formula 2] where P is an arylene group or a cycloalkylenegroup, Q is a single bond, an oxygen atom or —NR₃—, in which R₃ is ahydrogen, an alkyl group, an alkenyl group, an alkynyl group, an alkoxygroup or an aryl group, Z is the chain having three or morechain-forming atoms when P is an arylene group, or the chain having 8 ormore chain-forming atoms when P is a cycloalkylene group.
 21. The methodof claim 20, wherein P of Formula 2 is an arylene group having 6 to 12carbon atoms.
 22. The method of claim 1, wherein the block copolymerfurther comprises a second block having the unit represented by Formula5:

where B is a monovalent substituent having an aromatic structureincluding one or more halogen atoms.
 23. The method of claim 1, furthercomprising: selectively removing any one block of the block copolymer,which forms the self-assembly structure.
 24. The method of claim 23,further comprising: etching the substrate, after one block of the blockcopolymer is selectively removed.